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同位体30Sを用いた高濃度Bドープ中のSi自己拡散(Ⅱ)

dc.contributor.authorSiti Rahmah Binti Aid / シティ ラハマ ビンティ アイドen_US
dc.date.accessioned2014-05-16T01:05:49Z
dc.date.available2014-05-16T01:05:49Z
dc.date.issued2005-03-23en_US
dc.description修士(工学), 2004, 総合デザイン工学専攻en_US
dc.identifier.uri/sigma_local/handle/10721/1570
dc.languagejpnen_US
dc.publisher慶應義塾大学理工学研究科en_US
dc.subjectSi self-diffusionen
dc.subjectSi lsotopesen
dc.subjecthigh concentration dopingen
dc.subjectSi自己拡散ja
dc.subjectSi同位体ja
dc.subject高濃度ドーピングja
dc.title同位体30Sを用いた高濃度Bドープ中のSi自己拡散(Ⅱ)en_US
dc.title.alternativeSi Self-Diffusion under High Concentration B-Doped using 30Si Isotope Heterostructure (II)en_US
dc.type学位論文en_US

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