Experimental Study of the Behavior of Point Defects and Dopants in Silicon using Isotope Superlattices

dc.contributor.authorShimizu, Yasuo / 清水, 康雄en_US
dc.contributor.authorfulldescriptionShimizu, Yasuo / 清水, 康雄 / シミズ, ヤスオen_US
dc.date.accessioned2014-05-09T07:08:24Z
dc.date.available2014-05-09T07:08:24Z
dc.date.issued2009-03-23en_US
dc.description博士(工学), 2008, 基礎理工学en_US
dc.identifier.urihttp://iroha.scitech.lib.keio.ac.jp:8080/sigma/handle/10721/2304
dc.publisher慶應義塾大学理工学研究科en_US
dc.subjectシリコンja
dc.subject同位体ja
dc.subject超格子ja
dc.subjectイオン注入ja
dc.subject拡散ja
dc.subjectSiliconen
dc.subjectIsotopesen
dc.subjectSuperlatticesen
dc.subjectIon implantationen
dc.subjectDiffusionen
dc.titleExperimental Study of the Behavior of Point Defects and Dopants in Silicon using Isotope Superlatticesen_US
dc.title.alternative同位体超格子を用いたシリコン中の点欠陥と不純物の挙動に関する実験的研究en_US
dc.type学位論文en_US

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